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FDD5N50NZ Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDD5N50NZ Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page November 2011 ©2011 Fairchild Semiconductor Corporation FDD5N50NZ Rev. C0 www.fairchildsemi.com 1 UniFET-II TM MOSFET Maximum Ratings T C = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter FDD5N50NZ Units VDSS Drain to Source Voltage 500 V VGSS Gate to Source Voltage ±25 V ID Drain Current -Continuous (TC = 25oC) 4 A -Continuous (TC = 100oC) 2.4 IDM Drain Current - Pulsed (Note 1) 16 A EAS Single Pulsed Avalanche Energy (Note 2) 304 mJ IAR Avalanche Current (Note 1) 4 A EAR Repetitive Avalanche Energy (Note 1) 6.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 10 V/ns PD Power Dissipation (TC = 25oC) 62 W - Derate above 25oC 0.5 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FDD5N50NZ Units RJC Thermal Resistance, Junction to Case 2.0 oC/W RJA Thermal Resistance, Junction to Ambient 90 FDD5N50NZ N-Channel MOSFET 500V, 4A, 1.5 Features •RDS(on) = 1.38 ( Typ.)@ VGS = 10V, ID = 2A • Low Gate Charge ( Typ. 9nC) • Low Crss ( Typ. 4pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • ESD Imoroved Capability • RoHS Compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. G S D D-PAK *Drain current limited by maximum junction temperature |
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