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FDD5670 Datasheet(PDF) 3 Page - Fairchild Semiconductor

No. de pieza FDD5670
Descripción Electrónicos  60V N-Channel PowerTrench짰 MOSFET
Download  5 Pages
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDD5670 Datasheet(HTML) 3 Page - Fairchild Semiconductor

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FDD5670 Rev. B
2
Typical Characteristics
0
10
20
30
40
50
60
0
123
4
VDS, DRAIN-SOURCE VOLTAGE (V)
4.0V
5.0V
4.5V
V
GS = 10V
6.0V
3.5V
0.8
1
1.2
1.4
1.6
1.8
2
0
102030
4050
60
ID, DRAIN CURRENT (A)
VGS = 4.0V
7.0V
6.0V
10V
5.0V
4.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
ID =10A
VGS = 10V
0
0.01
0.02
0.03
0.04
0.05
3456789
10
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 10 A
T
A = 125
oC
T
A = 25
oC
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
50
60
22.533.544.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
oC
25
oC
V
DS = 5V
125
oC
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
T
A = 125
oC
25
oC
-55
oC
V
GS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.


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