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FDS86540 Datasheet(PDF) 1 Page - Fairchild Semiconductor

No. de pieza FDS86540
Descripción Electrónicos  N-Channel PowerTrench짰 MOSFET 60 V, 18 A, 4.5 m廓
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS86540 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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May 2012
©2012 Fairchild Semiconductor Corporation
FDS86540 Rev. C
www.fairchildsemi.com
1
FDS86540
N-Channel PowerTrench® MOSFET
60 V, 18 A, 4.5 m
Ω
Features
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A
High performance trench technologh for extremely low rDS(on)
High power and current handing capability in a widely used
surface mount package
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance
.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
SO-8
D
D
D
D
S
S
S
G
Pin 1
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
MOSFET Maximum Ratings T
A = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
60
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current
-Continuous
18
A
-Pulsed
120
EAS
Single Pulse Avalanche Energy
(Note 3)
194
mJ
PD
Power Dissipation
TC = 25 °C
(Note 1)
5.0
W
Power Dissipation
TA = 25 °C
(Note 1a)
2.5
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
RθJC
Thermal Resistance, Junction to Case
(Note 1)
25
°C/W
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDS86540
FDS86540
SO-8
13’’
12 mm
2500 units


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