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BD241B Datasheet(PDF) 1 Page - Comset Semiconductor

No. de pieza BD241B
Descripción Electrónicos  MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS
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Fabricante Electrónico  COMSET [Comset Semiconductor]
Página de inicio  http://comset.halfin.com
Logo COMSET - Comset Semiconductor

BD241B Datasheet(HTML) 1 Page - Comset Semiconductor

  BD241B Datasheet HTML 1Page - Comset Semiconductor BD241B Datasheet HTML 2Page - Comset Semiconductor BD241B Datasheet HTML 3Page - Comset Semiconductor  
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NPN BD241 – A – B – C
23/10/2012
COMSET SEMICONDUCTORS
1/3
M
ME
ED
DIIU
UM
M P
PO
OW
WE
ER
R L
LIIN
NE
EA
AR
R A
AN
ND
D S
SW
WIIT
TC
CH
HIIN
NG
G
A
AP
PP
PL
LIIC
CA
AT
TIIO
ON
NS
S..
The BD241, A, B, C are the NPN transistors mounted in Jedec TO-220 plastic package.
They are the silicon epitaxial-base Power Transistors for use in medium power linear and
switching applications.
The PNP complements are BD242, A, B, C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage (IB = 0)
BD241
45
V
BD241A
60
BD241B
80
BD241C
100
VCER
Collector-Emitter Voltage (RBE = 100 Ω)
BD241
55
V
BD241A
70
BD241B
90
BD241C
115
VEBO
Emitter-Base Voltage (IC = 0)
BD241
5.0
V
BD241A
BD241B
BD241C
IC
Collector Current
IC
3
A
ICM
5
IB
Base Current
1
A
PT
Power Dissipation
@ Tamb = 25° C
2
W
@ Tcase = 25° C
40
W
TJ
Junction Temperature
150
°C
TS
Storage Temperature
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-amb
Thermal Resistance, Junction-ambient
62.5
°C/W
RthJ-case
Thermal Resistance, Junction-case
3.13
°C/W


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