BD246A datasheet(2/3 Pages) COMSET

No. de pieza	BD246A

Descripción Electrónicos	PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS

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Fabricante Electrónico	COMSET [Comset Semiconductor]

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2 / 3 page

BD246, A, B, C

25/09/2012

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min

Typ

Mx

Unit

ICES

Collector- Emitter

Cut-off Current

VCE = -55 V , VBE = 0

BD246

-

-0.4

mA

VCE = -70 V , VBE = 0

BD246A

VCE = -90 V , VBE = 0

BD246B

VCE = -115 V , VBE = 0

BD246C

ICEO

Collector Cut-off

Current

VCE = -30 V , IB = 0

BD246

-

-0.7

mA

BD246A

VCE = -60 V , IB = 0

BD246B

BD246C

IEBO

Emitter Cut-off

Current

VE B = -5 V , IC = 0

-

-1

mA

VCEO

Collector- Emitter

Breakdown Voltage

(*)

IC = -30 mA, IB = 0

BD246

-45

-

V

BD246A

-60

-

BD246B

-80

-

BD246C

-100

-

hFE

DC Current Gain (*)

VCE = -4 V, IC = -1 A

40

-

VCE = -4 V, I C= -3 A

20

-

VCE = -4 V, IC = -10 A

4

-

VCE(SAT)

Collector-Emitter

saturation Voltage (*)

IC = -3 A, IB = -300 mA

-

-1

V

IC = -10 A, IB = -2.5 A

-

-4

VBE

Base-Emitter

Voltage(*)

VCE = -4 V, IC = -3 A

-

-1.6

V

VCE = -4 V, IC = -10 A

-

-3

hfe

Small Signal forward

Current Transfer ratio

VCE = -10 V, IC = -500 mA, f = 1MHz

20

-

|hfe|

Small Signal forward

Current Transfer ratio

VCE = -10 V, IC = -500 mA, f = 1MHz

3

-

RESISTIVE-LOAD-SWITCHING CHARACTERISTICS AT 25°C CASE

TEMPERATURE

Symbol

Ratings

Test Condition(s)

Min

Typ

Mx

Unit

ton

Turn-on Time

IC = -1 A , IB(on) = -100 mA , IB(off) =

100 mA

VBE(off) = 3.7 V , RL = 20 Ω , tp = 20

µs

dc

< 2%

-

0.2

-

µs

toff

Turn-off Time

IC = -1 A , IB(on) = -100 mA , IB(off) =

100 mA

VBE(off) = 3.7 V , RL = 20 Ω , tp = 20

µs

dc

< 2%

-

0.8

-

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