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FM25640B-GTR Datasheet(PDF) 1 Page - Cypress Semiconductor

No. de pieza FM25640B-GTR
Descripción Electrónicos  64Kb Serial 5V F-RAM Memory
Download  13 Pages
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Fabricante Electrónico  CYPRESS [Cypress Semiconductor]
Página de inicio  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25640B-GTR Datasheet(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
Rev. 3.0
www.ramtron.com
Jan. 2012
Page 1 of 13
FM25640B
64Kb Serial 5V F-RAM Memory
Features
64K bit Ferroelectric Nonvolatile RAM
Organized as 8,192 x 8 bits
High Endurance 1 Trillion (10
12) Read/Writes
38 Year Data Retention
NoDelay™ Writes
Advanced high-reliability ferroelectric process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz maximum bus frequency
Direct hardware replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
250 A Active Current (1 MHz)
4 A (typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM25640B is a 64-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 38 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
The FM25640B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM25640B is capable of
supporting up to 10
12 read/write cycles, or a million
times more write cycles than EEPROM.
These capabilities make the FM25640B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25640B provides substantial benefits to users
of
serial
EEPROM,
in
a
hardware
drop-in
replacement. The FM25640B uses the high-speed SPI
bus, which enhances the high-speed write capability
of
F-RAM
technology.
The
specifications
are
guaranteed over an industrial temperature range of
-40°C to +85°C.
Pin Configuration
Pin Names
Function
/CS
Chip Select
/HOLD
Hold
/WP
Write Protect
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
5V
VSS
Ground
Ordering Information
FM25640B-G
“Green”/RoHS 8-pin SOIC
FM25640B-GTR
“Green”/RoHS 8-pin SOIC,
Tape & Reel
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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