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2SC5415A Datasheet(PDF) 1 Page - Sanyo Semicon Device

No. de pieza 2SC5415A
Descripción Electrónicos  High-Frequency Low-Noise Amplifier Applications
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Fabricante Electrónico  SANYO [Sanyo Semicon Device]
Página de inicio  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5415A Datasheet(HTML) 1 Page - Sanyo Semicon Device

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2SC5415A
No. A1080-1/8
Features
•
High gain
:
⏐S21e⏐2=9dB typ (f=1GHz)
•
High cut-off frequency : fT=6.7GHz typ
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
V
Collector-to-Emitter Voltage
VCEO
12
V
Emitter-to-Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Collector Dissipation
PC
When mounted on ceramic substrate (250mm2×0.8mm)
800
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7007B-004
Ordering number : ENA1080A
90512 TKIM/93009AB TKIM TC-00002100
SANYO Semiconductors
DATA SHEET
http://www.sanyosemi.com/en/network/
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
Marking
Electrical Connection
TD
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
2SC5415AE-TD-E
2SC5415AF-TD-E
RANK
2
3
1
2SC5415A
NPN Epitaxial Planar Silicon Transistor
High-Frequency Low-Noise
Amplifier Applications


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