Motor de Búsqueda de Datasheet de Componentes Electrónicos
  Spanish  ▼
ALLDATASHEET.ES

X  

2N7002ELT1 Datasheet(PDF) 2 Page - WILLAS ELECTRONIC CORP

No. de pieza 2N7002ELT1
Descripción Electrónicos  310 mAmps, 60 Volts
Download  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  WILLAS [WILLAS ELECTRONIC CORP]
Página de inicio  http://www.willas.com.tw
Logo WILLAS - WILLAS ELECTRONIC CORP

2N7002ELT1 Datasheet(HTML) 2 Page - WILLAS ELECTRONIC CORP

  2N7002ELT1 Datasheet HTML 1Page - WILLAS ELECTRONIC CORP 2N7002ELT1 Datasheet HTML 2Page - WILLAS ELECTRONIC CORP 2N7002ELT1 Datasheet HTML 3Page - WILLAS ELECTRONIC CORP 2N7002ELT1 Datasheet HTML 4Page - WILLAS ELECTRONIC CORP  
Zoom Inzoom in Zoom Outzoom out
 2 / 4 page
background image
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 µAdc)
V(BR)DSS
60
Vdc
Zero Gate Voltage Drain Current
TJ = 25°C
(VGS = 0, VDS = 60 Vdc)
TJ = 125°C
IDSS
1.0
500
µAdc
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
100
nAdc
Gate–Body Leakage Current, Reverse
(VGS =–20 Vdc)
IGSSR
–100
nAdc
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS,ID = 250 µAdc)
VGS(th)
1.0
1.8
2.2
Vdc
On–State Drain Current
(VDS ≥ 2.0 VDS(on),VGS = 10 Vdc)
ID(on)
500
mA
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
VDS(on)
3.75
0.375
Vdc
Static Drain–Source On–State Resistance
(VGS = 10 V, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
rDS(on)
1.5
1.7
2.5
2.5
Ohms
Forward Transconductance
(VDS ≥ 2.0 VDS(on),ID = 200 mAdc)
gFS
80
mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
17
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
10
25
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
2.5
5.0
pF
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
(V DD = 25 Vdc , ID ^ 500 mAdc,
td(on)
7
20
ns
Turn–Off Delay Time
(V
RG = 25 Ω, RL = 50 Ω,Vgen = 10 V)
td(off)
11
40
ns
BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, V GS = 0 V)
VSD
–1.5
Vdc
Source Current Continuous
(Body Diode)
IS
–115
mAdc
Source Current Pulsed
ISM
–800
mAdc
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
2012-10
WILLAS ELECTRONIC CORP.
2N7002ELT1
Small Signal MOSFET
310 mAmps, 60 Volts
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Package outline
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
Terminals :Plated terminals, solderable per MIL-STD-750
,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
Pb Free Product
1.0A SURFACE MOUNT SCHOTTKY
SOD-123
PACKAGE
WILLAS
BARRIER RECTIFIERS -20V- 200V
FM120-M
THRU
FM1200-M
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
WILLAS ELECTRONIC CORP.
201
2-06
 
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Marking Code
12
13
14
15
16
18
10
115
120
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
14
21
28
35
42
56
70
105
140
20
30
40
50
60
80
100
150
200
Volts
Volts
Volts
Maximum Average Forward Rectified Current
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IO
 
IFSM
1.0
 
30
Amps
 
Amps
Typical Thermal Resistance (Note 2)
RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
 
 
-55 to +125
40
120
 
- 65 to +175
 
 
-55 to +150
℃/W
PF
 
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UNIT
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9
0.92
Volts
@TA=25℃
0.5
Maximum Average Reverse Current at
Rated DC Blocking Voltage
@TA=125℃
IR
10
 
mAmps
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
 
 
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"


Número de pieza similar - 2N7002ELT1

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
NXP Semiconductors
2N7002E PHILIPS-2N7002E Datasheet
81Kb / 11P
   N-channel TrenchMOS FET
Rev. 02-26 April 2005
logo
Vishay Siliconix
2N7002E VISHAY-2N7002E Datasheet
150Kb / 7P
   N-Channel 60 V (D-S) MOSFET
01-Jan-2022
logo
Diodes Incorporated
2N7002E DIODES-2N7002E Datasheet
419Kb / 4P
   N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DS30376 Rev. 5 - 2
logo
ON Semiconductor
2N7002E ONSEMI-2N7002E Datasheet
205Kb / 6P
   Small Signal MOSFET Single N?묬hannel, 60 V, 310 mA, 2.5 Ohm
June, 2019 ??Rev. 7
logo
Vishay Siliconix
2N7002E VISHAY-2N7002E Datasheet
85Kb / 5P
   N-Channel 60-V (D-S) MOSFET
Rev. D, 13-Oct-03
More results

Descripción similar - 2N7002ELT1

Fabricante ElectrónicoNo. de piezaDatasheetDescripción Electrónicos
logo
WILLAS ELECTRONIC CORP
2N7002LT1 WILLAS-2N7002LT1 Datasheet
313Kb / 4P
   115 mAmps, 60 Volts
2N7002DW1T1 WILLAS-2N7002DW1T1 Datasheet
314Kb / 4P
   115 mAmps,60 Volts
logo
Leshan Radio Company
L2SK801LT1G LRC-L2SK801LT1G Datasheet
161Kb / 4P
   Small Signal MOSFET 310 mAmps, 60 Volts N?밅hannel SOT??3
L2N7002SDW1T1G LRC-L2N7002SDW1T1G Datasheet
1,003Kb / 7P
   L2N7002SDW1T1GSmall Signal MOSFET380 mAmps, 60 Volts
logo
ON Semiconductor
2N7000 ONSEMI-2N7000_07 Datasheet
57Kb / 4P
   Small Signal MOSFET 200 mAmps, 60 Volts N?묬hannel TO??2 200 mAMPS 60 VOLTS
March, 2007 ??Rev. 6
logo
Leshan Radio Company
L2N7003LT1 LRC-L2N7003LT1 Datasheet
149Kb / 3P
   Small Signal MOSFET 115 mAmps, 60 Volts
logo
ON Semiconductor
2N7000G ONSEMI-2N7000G Datasheet
92Kb / 4P
   Small Signal MOSFET 200 mAmps, 60 Volts
April, 2011 ??Rev. 8
logo
Leshan Radio Company
L2N7002SWT1G LRC-L2N7002SWT1G Datasheet
449Kb / 7P
   Small Signal MOSFET 380 mAmps, 60 Volts
L2N7002M3T5G LRC-L2N7002M3T5G Datasheet
173Kb / 4P
   Small Signal MOSFET 115 mAmps, 60 Volts
L2N7002KN3T5G LRC-L2N7002KN3T5G Datasheet
230Kb / 5P
   Small Signal MOSFET 380 mAmps, 60 Volts
More results


Html Pages

1 2 3 4


Datasheet Descarga

Go To PDF Page


Enlace URL




Política de Privacidad
ALLDATASHEET.ES
¿ALLDATASHEET es útil para Ud.?  [ DONATE ] 

Todo acerca de Alldatasheet   |   Publicidad   |   Contáctenos   |   Política de Privacidad   |   Intercambio de Enlaces   |   Lista de Fabricantes
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com