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CSD16408Q5 Datasheet(PDF) 1 Page - Texas Instruments

No. de pieza CSD16408Q5
Descripción Electrónicos  The NexFET power MOSFET has been designed to minimize losses in power conversion applications.
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
Logo TI1 - Texas Instruments

CSD16408Q5 Datasheet(HTML) 1 Page - Texas Instruments

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background image
1
D
2
D
3
D
4
D
D
5
G
6
S
7
S
8
S
P0094-01
VGS − Gate to Source Voltage − V
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
G006
ID = 25A
TC = 125°C
TC = 25°C
Qg − Gate Charge − nC
0
2
4
6
8
10
12
0
5
10
15
20
G003
ID = 25A
VDS = 12.5V
CSD16408Q5
www.ti.com
SLPS228A – OCTOBER 2009 – REVISED SEPTEMBER 2010
N-Channel NexFET™ Power MOSFET
1
FEATURES
PRODUCT SUMMARY
2
Ultralow Qg and Qgd
VDS
Drain-to-source voltage
25
V
Low Thermal Resistance
Qg
Gate charge, total (4.5 V)
6.7
nC
Avalanche Rated
Qgd
Gate charge, gate-to-drain
1.9
nC
SON 5-mm × 6-mm Plastic Package
VGS = 4.5 V
5.4
m
rDS(on)
Drain-to-source on-resistance
VGS = 10 V
3.6
m
APPLICATIONS
VGS(th)
Threshold voltage
1.8
V
Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
ORDERING INFORMATION
Optimized for Control FET Applications
Device
Package
Media
Qty
Ship
SON 5-mm × 6-mm
13-inch
Tape and
CSD16408Q5
plastic package
(33-cm)
2500
reel
DESCRIPTION
reel
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
Top View
VDS
Drain-to-source voltage
25
V
VGS
Gate-to-source voltage
–12 to 16
V
Continuous drain current, TC = 25°C
113
A
ID
Continuous drain current(1)
22
A
IDM
Pulsed drain current, TA = 25°C
(2)
141
A
PD
Power dissipation(1)
3.1
W
TJ,
Operating junction and storage temperature
–55 to 150
°C
TSTG
range
Avalanche energy, single-pulse
EAS
126
mJ
ID = 23 A, L = 0.1 mH, RG = 25 Ω
(1)
Typical RqJA = 41°C/W on 1-inch
2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
(2)
Pulse duration
≤300 ms, duty cycle ≤2%
put a break here is force notes closer to the table
put a break here is force notes closer to the table
rDS(on) vs VGS
GATE CHARGE
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Copyright © 2009–2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.


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