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CSD17522Q5A Datasheet(PDF) 3 Page - Texas Instruments

No. de pieza CSD17522Q5A
Descripción Electrónicos  The NexFET power MOSFET has been designed to minimize losses in power conversion applications, and optimized for 5V gate drive applications.
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Fabricante Electrónico  TI1 [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD17522Q5A Datasheet(HTML) 3 Page - Texas Instruments

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GATE
Source
DRAIN
M0137-02
GATE
Source
DRAIN
M0137-01
t -PulseDuration-s
p
0.001
0.01
0.1
1
10
100
1k
0.001
0.01
0.1
1
10
G012
DutyCycle=t /t
1 2
t
1
t
2
TypicalR
=100 C/W(minCu)
T =P
Z
R
q
q
q
JA
J
JA
JA
°
´
´
P
SinglePulse
0.01
0.02
0.05
0.1
0.3
0.5
CSD17522Q5A
www.ti.com
SLPS341A
– JUNE 2011 – REVISED AUGUST 2011
Max RθJA = 51°C/W
Max RθJA = 125°C/W
when mounted on
when mounted on a
1 inch2 (6.45 cm2) of
minimum pad area of
2-oz. (0.071-mm thick)
2-oz. (0.071-mm thick)
Cu.
Cu.
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Figure 2. Transient Thermal Impedance
Copyright
© 2011, Texas Instruments Incorporated
3


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