CSD18503Q5A_12 datasheet(4/12 Pages) TI1

No. de pieza	CSD18503Q5A

Descripción Electrónicos	The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

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Fabricante Electrónico	TI1 [Texas Instruments]

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4 / 12 page

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TC - Case Temperature (ºC)

VGS = 4.5V

VGS = 10V

ID = 22A

G001

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VSD − Source-to-Drain Voltage (V)

TC = 25°C

TC = 125°C

G001

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−25

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TC - Case Temperature (ºC)

ID = 250uA

G001

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VGS - Gate-to- Source Voltage (V)

TC = 25°C Id = 22A

TC = 125ºC Id = 22A

G001

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Qg - Gate Charge (nC)

ID = 22A

VDS = 20V

G001

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VDS - Drain-to-Source Voltage (V)

Ciss = Cgd + Cgs

Coss = Cds + Cgd

Crss = Cgd

G001

CSD18503Q5A

SLPS358B – JUNE 2012 – REVISED NOVEMBER 2012

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(TA = 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

Figure 5. Gate Charge

Figure 6. Capacitance

TEXT ADDED FOR SPACING

Figure 7. Threshold Voltage vs. Temperature

Figure 8. On-State Resistance vs. Gate-to-Source Voltage

TEXT ADDED FOR SPACING

Figure 9. Normalized On-State Resistance vs. Temperature

Figure 10. Typical Diode Forward Voltage

4

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