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1N3673AR Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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1N3673AR Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
1 / 2 page VRRM = 50 V - 1000 V IF = 12 A Features • High Surge Capability DO-4 Package • Types up to 1000 V VRRM Parameter Symbol Unit Repetitive peak reverse voltage VRRM V 1N3671A thru 1N3673AR Maximum ratings, at Tj = 25 °C, unless otherwise specified Silicon Standard Recovery Diode Conditions 1N3671A (R) 800 1000 1N3673A (R) pp g RMS reverse voltage VRMS V DC blocking voltage VDC V Continuous forward current IF A Operating temperature Tj °C Storage temperature Tstg °C Parameter Symbol Unit Diode forward voltage μA mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W VR = 50 V, Tj = 175 °C V VR = 50 V, Tj = 25 °C IF = 12 A, Tj = 25 °C TC ≤ 150 °C Conditions Electrical characteristics, at Tj = 25 °C, unless otherwise specified TC = 25 °C, tp = 8.3 ms Surge non-repetitive forward current, Half Sine Wave IF,SM -65 to 200 Reverse current IR VF A 560 800 12 240 700 1000 12 240 -65 to 200 1N3671A (R) 1N3673A (R) 1.1 1.1 -65 to 200 -65 to 200 10 15 10 15 2.00 2.00 www.genesicsemi.com 1 |
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