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MC33163PG Datasheet(PDF) 2 Page - ON Semiconductor

No. de pieza MC33163PG
Descripción Electrónicos  3.4 A, Step-Up/Down/ Inverting Switching Regulators
Download  16 Pages
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Fabricante Electrónico  ONSEMI [ON Semiconductor]
Página de inicio  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC33163PG Datasheet(HTML) 2 Page - ON Semiconductor

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MC34163, MC33163
http://onsemi.com
2
MAXIMUM RATINGS (Note 1)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
40
V
Switch Collector Voltage Range
VC(switch)
−1.0 to + 40
V
Switch Emitter Voltage Range
VE(switch)
− 2.0 to VC(switch)
V
Switch Collector to Emitter Voltage
VCE(switch)
40
V
Switch Current (Note 2)
ISW
3.4
A
Driver Collector Voltage
VC(driver)
−1.0 to +40
V
Driver Collector Current
IC(driver)
150
mA
Bootstrap Input Current Range (Note 2)
IBS
−100 to +100
mA
Current Sense Input Voltage Range
VIpk (Sense)
(VCC−7.0) to (VCC+1.0)
V
Feedback and Timing Capacitor Input Voltage Range
Vin
−1.0 to + 7.0
V
Low Voltage Indicator Output Voltage Range
VC(LVI)
−1.0 to + 40
V
Low Voltage Indicator Output Sink Current
IC(LVI)
10
mA
Thermal Characteristics
P Suffix, Dual−In−Line Case 648C
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case (Pins 4, 5, 12, 13)
DW Suffix, Surface Mount Case 751G
Thermal Resistance, Junction−to−Air
Thermal Resistance, Junction−to−Case (Pins 4, 5, 12, 13)
RqJA
RqJC
RqJA
RqJC
80
15
94
18
°C/W
Operating Junction Temperature
TJ
+150
°C
Operating Ambient Temperature (Note 3)
MC34163
MC33163
TA
0 to +70
− 40 to + 85
°C
Storage Temperature Range
Tstg
− 65 to +150
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests: Human Body Model 1500 V per MIL−STD−883, Method 3015.
Machine Model Method 150 V.
2. Maximum package power dissipation limits must be observed.
3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
ORDERING INFORMATION
Device
Package
Shipping
MC33163DW
SOIC−16W
47 Units / Rail
MC33163DWG
SOIC−16W
(Pb−Free)
47 Units / Rail
MC33163DWR2
SOIC−16W
1000 Units / Reel
MC33163DWR2G
SOIC−16W
(Pb−Free)
1000 Units / Reel
MC33163P
PDIP−16
25 Units / Rail
MC33163PG
PDIP−16
(Pb−Free)
25 Units / Rail
MC34163DW
SOIC−16W
47 Units / Rail
MC34163DWG
SOIC−16W
(Pb−Free)
47 Units / Rail
MC34163DWR2
SOIC−16W
1000 Units / Reel
MC34163DWR2G
SOIC−16W
(Pb−Free)
1000 Units / Reel
MC34163P
PDIP−16
25 Units / Rail
MC34163PG
PDIP−16
(Pb−Free)
25 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.


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