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ADG611 Datasheet(PDF) 3 Page - Analog Devices |
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ADG611 Datasheet(HTML) 3 Page - Analog Devices |
3 / 12 page REV. 0 –3– SINGLE SUPPLY1(V DD = 5 V 10%, VSS = 0 V, GND = 0 V, unless otherwise noted.) Y Version –40 C –40 C Parameter 25 C to +85 C to +125 C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range 0 V to VDD V On-Resistance (RON) 210 Ω typ VS = 3.5 V, IS = –1 mA; 290 350 380 Ω max Test Circuit 1 On-Resistance Match Between 3 Ω typ VS = 3.5 V , IS = –1 mA Channels ( ∆RON)10 12 13 Ω max LEAKAGE CURRENTS VDD = 5.5 V Source OFF Leakage IS (OFF) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; ±0.1 ±0.25 ±2 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) ±0.01 nA typ VS = 1 V/4.5 V, VD = 4.5 V/1 V; ±0.1 ±0.25 ±2 nA max Test Circuit 2 Channel ON Leakage ID, IS (ON) ±0.01 nA typ VS = VD = 1 V or 4.5 V, Test Circuit 3 ±0.1 ±0.25 ±6 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 V min Input Low Voltage, VINL 0.8 V max Input Current IINL or IINH 0.005 µA typ VIN = VINL or VINH ±0.1 µA max CIN, Digital Input Capacitance 2 2 pF typ DYNAMIC CHARACTERISTICS2 tON 70 ns typ RL = 300 Ω, CL = 35 pF 100 130 150 ns max VS = 3.0 V, Test Circuit 4 tOFF 25 ns typ RL = 300 Ω, C L = 35 pF 40 45 50 ns max VS = 3.0 V, Test Circuit 4 Break-Before-Make Time Delay, tD 25 ns typ RL = 300 Ω, CL = 35 pF 10 ns min VS1 = VS2 = 3.0 V, Test Circuit 5 Charge Injection 1 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; Test Circuit 6 Off Isolation –62 dB typ RL = 50 Ω, C L = 5 pF, f = 10 MHz Test Circuit 7 Channel-to-Channel Crosstalk –90 dB typ RL = 50 Ω, CL = 5 pF, f = 10 MHz Test Circuit 8 –3 dB Bandwidth 680 MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 9 CS (OFF) 5 pF typ f = 1 MHz CD (OFF) 5 pF typ f = 1 MHz CD, CS (ON) 5 pF typ f = 1 MHz POWER REQUIREMENTS VDD = 5.5 V IDD 0.001 µA typ Digital Inputs = 0 V or 5.5 V 1.0 µA max NOTES 1Temperature ranges are as follows. Y Version: –40 °C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. ADG611/ADG612/ADG613 |
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