ADG619BRM datasheet(3/8 Pages) AD

No. de pieza	ADG619BRM

Descripción Electrónicos	CMOS -5 V/ 5V 4 OHM SINGLE SPDT SWITCHES

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REV. 0

–3–

ADG619/ADG620

SINGLE SUPPLY1 (V

DD = +5 V

10%, VSS = 0 V, GND = 0 V. All specifications –40 C to +85 C unless otherwise noted.)

B Version

–40 C to

Parameter

+25 C

+85 C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

VVDD = 4.5 V, VSS = 0 V

On Resistance (RON)7

Ω typ

VS = 0 V to 4.5 V, IS = –10 mA,

ß10

12.5

Ω max

Test Circuit 1

On Resistance Match Between

Channels (

∆R

ON)

0.8

Ω typ

VS = 0 V to 4.5 V, IS = –10 mA

1

1.2

Ω max

On-Resistance Flatness (RFLAT(ON))

0.5

Ω typ

VS = 1.5 V to 3.3 V, IS = –10 mA

0.8

Ω max

LEAKAGE CURRENTS

VDD = 5.5 V

Source OFF Leakage IS (OFF)

±0.01

nA typ

VS = 1 V/4.5 V, VD = 4.5 V/1 V,

±0.25

±1

nA max

Test Circuit 2

Channel ON Leakage ID, IS (ON)

±0.01

nA typ

VS = VD = 1 V/4.5 V,

±0.25

±1

nA max

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, VINH

2.4

V min

Input Low Voltage, VINL

0.8

V max

Input Current

IINL or IINH

0.005

µA typ

VIN = VINL or VINH

±0.1

µA max

CIN, Digital Input Capacitance

2

pF typ

DYNAMIC CHARACTERISTICS

2

ADG619

tON

120

ns typ

RL = 300

Ω, C

L = 35 pF

220

280

ns max

VS = 3.3 V, Test Circuit 4

tOFF

50

ns typ

RL = 300

Ω, CL = 35 pF

75

110

ns max

VS = 3.3 V, Test Circuit 4

Break-Before-Make Time Delay, tBBM

70

ns typ

RL = 300

Ω, CL = 35 pF,

10

ns min

VS1 = VS2 = 3.3 V, Test Circuit 5

ADG620

tON

50

ns typ

RL = 300

Ω, CL = 35 pF

85

110

ns max

VS = 3.3 V, Test Circuit 4

tOFF

210

ns typ

RL = 300

Ω, C

L = 35 pF

340

420

ns max

VS = 3.3 V, Test Circuit 4

Make-Before-Break Time Delay, tMBB

170

ns typ

RL = 300

Ω, CL = 35 pF

10

ns min

VS = 3.3 V, Test Circuit 6

Charge Injection

6

pC typ

VS = 0 V, RS = 0

Ω,CL = 1 nF,

Test Circuit 7

Off Isolation

–67

dB typ

RL = 50

Ω, C

L = 5 pF, f = 1 MHz,

Test Circuit 8

Channel-to-Channel Crosstalk

–67

dB typ

RL = 50

Ω, CL = 5 pF, f = 1 MHz,

Test Circuit 10

Bandwidth –3 dB

190

MHz typ

RL = 50

Ω, CL = 5 pF, Test Circuit 9

CS (OFF)

25

pF typ

f = 1 MHz

CD, CS (ON)

95

pF typ

f = 1 MHz

POWER REQUIREMENTS

VDD = 5.5 V

IDD

0.001

µA typ

Digital Inputs = 0 V or 5.5 V

1.0

µA max

NOTES

1Temperature ranges are as follows: B Version, –40

°C to +85°C.

2Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

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