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ADG721BRM Datasheet(PDF) 4 Page - Analog Devices

No. de pieza ADG721BRM
Descripción Electrónicos  CMOS Low Voltage 4 ohm Dual SPST Switches
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ADG721BRM Datasheet(HTML) 4 Page - Analog Devices

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ADG721/ADG722/ADG723
–4–
REV. 0
ORDERING GUIDE
Model
Temperature Range
Brand*
Package Description
Package Option
ADG721BRM
–40
°C to +85°C
S6B
µSOIC
RM-8
ADG722BRM
–40
°C to +85°C
S7B
µSOIC
RM-8
ADG723BRM
–40
°C to +85°C
S8B
µSOIC
RM-8
*Brand = Due to package size limitations, these three characters represent the part number.
PIN CONFIGURATION
8-Lead
SOIC (RM-8)
TOP VIEW
(Not to Scale)
8
7
6
5
1
2
3
4
S1
D1
IN2
GND
VDD
IN1
D2
S2
ADG721/
722/723
Table I. Truth Table (ADG721/ADG722)
ADG721 In
ADG722 In
Switch Condition
0
1
OFF
10
ON
Table II. Truth Table (ADG723)
Logic
Switch 1
Switch 2
0
OFF
ON
1
ON
OFF
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the ADG721/ADG722/ADG723 features proprietary ESD protection circuitry, per-
manent damage may occur on devices subjected to high energy electrostatic discharges. There-
fore, proper ESD precautions are recommended to avoid performance degradation or loss of
functionality.
WARNING!
ESD SENSITIVE DEVICE
ABSOLUTE MAXIMUM RATINGS
1
(TA = +25
°C unless otherwise noted)
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
Analog, Digital Inputs
2
. . . . . . . . . . . –0.3 V to VDD + 0.3 V or
30 mA, Whichever Occurs First
Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA
Operating Temperature Range
Industrial (B Version) . . . . . . . . . . . . . . . . . –40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65
°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . +150
°C
µSOIC Package, Power Dissipation . . . . . . . . . . . . . . . 450 mW
θ
JA Thermal Impedance . . . . . . . . . . . . . . . . . . . . . 206
°C/W
θ
JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . . . 44
°C/W
Lead Temperature, Soldering
Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . +215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 kV
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute maximum rating condi-
tions for extended periods may affect device reliability. Only one absolute maxi-
mum rating may be applied at any one time.
2Overvoltages at IN, S or D will be clamped by internal diodes. Current should be
limited to the maximum ratings given.
TERMINOLOGY
VDD
Most Positive Power Supply Potential.
GND
Ground (0 V) Reference.
S
Source Terminal. May be an input or output.
D
Drain Terminal. May be an input or output.
IN
Logic Control Input.
RON
Ohmic resistance between D and S.
∆R
ON
On resistance match between any two channels
i.e., RON max – RON min.
RFLAT(ON)
Flatness is defined as the difference between the
maximum and minimum value of on resistance as
measured over the specified analog signal range.
IS (OFF)
Source leakage current with the switch “OFF.”
ID (OFF)
Drain leakage current with the switch “OFF.”
ID, IS (ON)
Channel leakage current with the switch “ON.”
VD (VS)
Analog voltage on terminals D, S.
CS (OFF)
“OFF” Switch Source Capacitance.
CD (OFF)
“OFF” Switch Drain Capacitance.
CD, CS (ON) “ON” Switch Capacitance.
tON
Delay between applying the digital control input
and the output switching on.
tOFF
Delay between applying the digital control input
and the output switching off.
tD
“OFF” time or “ON” time measured between the
90% points of both switches, When switching
from one address state to another. (ADG723 Only)
Crosstalk
A measure of unwanted signal which is coupled
through from one channel to another as a result
of parasitic capacitance.
Off Isolation A measure of unwanted signal coupling through
an “OFF” switch.
Charge
A measure of the glitch impulse transferred
Injection
during switching.


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