ADG751BRM datasheet(3/10 Pages) AD

No. de pieza	ADG751BRM

Descripción Electrónicos	CMOS, Low Voltage RF/Video, SPST Switch

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REV. 0

–3–

ADG751

SPECIFICATIONS

B Grade

A Grade

–40 C to

Parameter

+25 C

+85 C

+25 C

+85 C

Units

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

V

On-Resistance (RON)60

35

Ω typ

VS = 0 V to VDD, IDS = –10 mA;

90

50

Ω max

Test Circuit 1

LEAKAGE CURRENTS

VDD = +3.3 V

Source OFF Leakage IS (OFF)

±0.01

nA typ

VD = 3 V/1 V, VS = 1 V/3 V;

±0.25

±3.0

±0.25

±3.0

nA max

Test Circuit 2

Drain OFF Leakage ID (OFF)

±0.01

nA typ

VD = 1 V/3 V, VS = 3 V/1 V;

±0.25

±3.0

±0.25

±3.0

nA max

Test Circuit 2

Channel ON Leakage ID, IS (ON)

±0.01

nA typ

VD = VS = 1 V, or 3 V;

±0.25

±3.0

±0.25

±3.0

nA max

Test Circuit 3

DIGITAL INPUTS

Input High Voltage, VINH

2.0

V min

Input Low Voltage, VINL

0.4

V max

Input Current

IINL or IINH

0.001

µA typ

VIN = VINL or VINH

±0.5

µA max

CIN, Digital Input Capacitance

2

pF typ

DYNAMIC CHARACTERISTICS

1

tON

12

ns typ

RL = 300 Ω, CL = 35 pF;

19

ns max

VS = 2 V, Test Circuit 4

tOFF

4

ns typ

RL = 300 Ω, CL = 35 pF;

6

ns max

VS = 2 V, Test Circuit 4

Charge Injection

1

pC typ

VS = 1 V, RS = 0 Ω, CL = 1.0 nF;

Test Circuit 5

Off Isolation

–75

–65

dB typ

RL = 50 Ω, CL = 5 pF, f = 100 MHz;

Test Circuit 6

–3 dB Bandwidth

180

280

MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 7

CS (OFF)

4

pF typ

CD (OFF)

4

pF typ

CD, CS (ON)

26

15

pF typ

POWER REQUIREMENTS

VDD = +3.3 V

IDD

0.001

µA typ

Digital Inputs = 0 V or +3.3 V

0.1

0.5

0.1

0.5

µA max

NOTES

1Guaranteed by design, not subject to production test.

Specifications subject to change without notice.

(VDD = +3 V

10%, GND = 0 V, unless otherwise noted.)

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