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ADR293GT9 Datasheet(PDF) 3 Page - Analog Devices |
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ADR293GT9 Datasheet(HTML) 3 Page - Analog Devices |
3 / 11 page ADR293 REV. 0 –3– WAFER TEST LIMITS Parameter Symbol Conditions Limits Units INITIAL ACCURACY VO IOUT = 0 mA 4.990/5.010 V LINE REGULATION ∆V O/ ∆V IN 6.0 V < VIN < 15 V, IOUT = 0 mA 150 ppm/V LOAD REGULATION ∆V O/ ∆I LOAD 0 mA to 5 mA 150 ppm/mA SUPPLY CURRENT No load 15 µA NOTES Electrical tests are performed as wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. Specifications subject to change without notice. DICE CHARACTERISTICS Die Size 0.074 0.052 inch, 3848 sq. mils (1.88 1.32 mm, 2.48 sq. mm) Transistor Count: 52 (VS = 6.0 V, TA = 25 C unless otherwise noted) VIN 4 3 2 1 V OUT(SENSE) V OUT(FORCE) GND |
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