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BUK9Y4R8-60E Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK9Y4R8-60E Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 13 page NXP Semiconductors BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 BUK9Y4R8-60E All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved Product data sheet 20 February 2013 8 / 13 003aaj816 0 0.8 1.6 2.4 -60 0 60 120 180 Tj (°C) a Fig. 12. Normalized drain-source on-state resistance factor as a function of junction temperature 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 13. Gate charge waveform definitions 003aaj152 0 2 4 6 8 10 0 40 80 120 QG(nC) VGS (V) VDS= 48V VDS= 14V Fig. 14. Gate-source voltage as a function of gate charge; typical values 003aaj153 102 103 104 10-1 1 10 102 VDS(V) C (pF) Ciss Crss Coss Fig. 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values |
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