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CSD18534Q5A Datasheet(PDF) 1 Page - Texas Instruments |
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CSD18534Q5A Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 12 page  0 4 8 12 16 20 24 28 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) TC = 25°C Id = 14A TC = 125ºC Id = 14A G001 0 1 2 3 4 5 6 7 8 9 10 0 4 8 12 16 20 Qg - Gate Charge (nC) ID = 14A VDS = 30V G001 1 D 2 D 3 D 4 D D 5 G 6 S 7 S 8 S P0093-01 CSD18534Q5A www.ti.com SLPS389A – OCTOBER 2012 – REVISED JANUARY 2013 60-V N-Channel NexFET™ Power MOSFETs Check for Samples: CSD18534Q5A 1 FEATURES PRODUCT SUMMARY 2 • Ultra Low Qg and Qgd TA = 25°C TYPICAL VALUE UNIT • Low Thermal Resistance VDS Drain to Source Voltage 60 V • Avalanche Rated Qg Gate Charge Total (10V) 17 nC Qgd Gate Charge Gate to Drain 3.5 nC • Logic Level VGS = 4.5V 9.9 m Ω • Pb Free Terminal Plating RDS(on) Drain to Source On Resistance VGS = 10V 7.8 m Ω • RoHS Compliant VGS(th) Threshold Voltage 1.9 V • Halogen Free • SON 5-mm × 6-mm Plastic Package ORDERING INFORMATION Device Package Media Qty Ship APPLICATIONS SON 5-mm × 6-mm 13-Inch Tape and CSD18534Q5A 2500 Plastic Package Reel Reel • DC-DC Conversion • Secondary Side Synchronous Rectifier ABSOLUTE MAXIMUM RATINGS • Isolated Converter Primary Side Switch TA = 25°C VALUE UNIT • Motor Control VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V DESCRIPTION Continuous Drain Current (Package limited), 50 TC = 25°C The NexFET™ power MOSFET has been designed ID Continuous Drain Current (Silicon limited), A to minimize losses in power conversion applications. 69 TC = 25°C Continuous Drain Current, TA = 25°C (1) 13 Top View IDM Pulsed Drain Current, TA = 25°C (2) 81 A PD Power Dissipation(1) 3.1 W TJ, Operating Junction and Storage –55 to 150 °C TSTG Temperature Range Avalanche Energy, single pulse EAS 80 mJ ID = 40A, L = 0.1mH, RG = 25Ω (1) Typical RθJA = 40°C/W on a 1-inch 2, 2-oz. Cu pad on a 0.06- inch thick FR4 PCB. (2) Pulse duration ≤300μs, duty cycle ≤2% RDS(on) vs VGS GATE CHARGE 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 2 NexFET is a trademark of Texas Instruments. PRODUCTION DATA information is current as of publication date. Copyright © 2012–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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