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CSD43301Q5M Datasheet(Hoja de datos) 2 Page - Texas Instruments

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No. de Pieza. CSD43301Q5M
Descripción  NexFET Smart Synchronous Rectifier
Descarga  15 Pages
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Fabricante  TI [Texas Instruments]
Página de inicio  http://www.ti.com
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CSD43301Q5M
SLPS380A – DECEMBER 2012 – REVISED DECEMBER 2012
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)
TA = 25°C (unless otherwise noted)
VALUE
UNIT
MIN
MAX
DRAIN to PGND
-0.3
12
V
DRAIN to PGND (10ns)
-7
14
V
VDD to PGND
–0.3
8
V
IN, SD to PGND
(2)
–0.3
VDD + 0.3
V
Human Body Model (HBM)
2000
V
ESD Rating
Charged Device Model (CDM)
500
V
Power Dissipation (PD)
12
W
Operating Temperature Range, (TJ)
-40
150
°C
Storage Temperature Range, (TSTG)
–65
150
°C
(1)
Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating
Conditions" is not implied. Exposure to Absolute Maximum rated conditions for extended periods may affect device reliability.
(2)
Must not exceed 8V
RECOMMENDED OPERATING CONDITIONS
TA = 25° (unless otherwise noted)
Parameter
Conditions
MIN
MAX
UNIT
Bias Voltage (VDD)
4.5
6
V
Input Supply Voltage (VIN)
9.6
V
Continuous Output Current (IOUT)
80
A
Peak Output Current, ( IOUT-PK)
(1)
120
A
Switching Frequency, (fSW)
1500
kHz
Minimum IN Pulse Width
48
ns
Operating Temperature
–40
125
°C
(1)
Peak Output Current is applied for tp = 50µs.
THERMAL INFORMATION
TA = 25°C (unless otherwise noted)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal Resistance, Junction-to-Case (Top of package)
20
°C/W
RθJB
Thermal Resistance, Junction-to-Board(1)
2
°C/W
(1)
RθJB value based on hottest board temperature within 1mm of the package.
2
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Copyright © 2012, Texas Instruments Incorporated




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