MMSF4N01HD datasheet(3/10 Pages) MOTOROLA

No. de pieza	MMSF4N01HD

Descripción Electrónicos	TMOS MOSFET 5.8 AMPERES 20 VOLTS

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Fabricante Electrónico	MOTOROLA [Motorola, Inc]

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MMSF4N01HD

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

0.4

0.8

0

2

4

8

TJ = 25°C

1.2

6

1.6

2

4.5 V

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

1

1.2

1.4

2.2

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

2

4

8

0.03

0.04

0.05

0.06

0.07

0

2

4

8

0.030

0.035

0.040

0.050

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. On–Resistance versus

Gate–To–Source Voltage

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

0

2

4

12

100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

VDS ≥ 10 V

TJ = 25°C

VGS = 0 V

TJ = 25°C

ID = 2 A

VGS = 2.7 V

VGS = 4.5 V

ID = 4 A

1.6

1.8

2

6

4.5 V

– 50

– 25

0

25

50

75

100

125

150

TJ = 125°C

10

8

10

100

°C

0

2

4

8

6

25

°C

100

°C

TJ = – 55°C

0.045

6

0.2

0.6

1

1.4

1.8

VGS = 8 V

3.1 V

2.7 V

2.5 V

2.3 V

2.1 V

1.9 V

1.5 V

1.7 V

1.3 V

0

0.5

1

2

1.5

Número de pieza similar - MMSF4N01HD

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ON Semiconductor	MMSF4N01HD	257Kb / 12P	N?묬hannel Power MOSFET Sep, 2004 ??Rev. XXX
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MMSF4N01HD Datasheet(PDF) 3 Page - Motorola, Inc

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