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MMSF7N03Z Datasheet(PDF) 2 Page - Motorola, Inc |
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MMSF7N03Z Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 10 page MMSF7N03Z 2 Motorola TMOS Power MOSFET Transistor Device Data ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Cpk ≥ 2.0) (1) (3) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 30 — — 35 — — Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS — — 0.03 0.15 2.0 10 µAdc Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0) IGSS — 1.3 5.0 µAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (Cpk ≥ 2.0) (1) (3) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 1.0 — 2.0 5.5 3.0 — Vdc mV/ °C Static Drain–to–Source On–Resistance (Cpk ≥ 2.0) (1) (3) (VGS = 10 Vdc, ID = 7.5 Adc) (VGS = 4.5 Vdc, ID = 3.8 Adc) RDS(on) — — 22 30 30 40 m Ω Forward Transconductance (VDS = 3.0 Vdc, ID = 3.8 Adc) (1) gFS 4.0 9.5 — Mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 24 Vdc V 0 Vdc Ciss — 750 1500 pF Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss — 340 680 Transfer Capacitance f = 1.0 MHz) Crss — 45 90 SWITCHING CHARACTERISTICS(2) Turn–On Delay Time (V 15 Vd I 5 0 Ad td(on) — 40 80 ns Rise Time (VDS = 15 Vdc, ID = 5.0 Adc, tr — 90 180 Turn–Off Delay Time ( DS , D , VGS = 10 Vdc, RG = 6 Ω) (1) td(off) — 470 940 Fall Time tf — 170 340 Turn–On Delay Time (V 15 Vd I 5 0 Ad td(on) — 120 240 ns Rise Time (VDD = 15 Vdc, ID = 5.0 Adc, tr — 350 700 Turn–Off Delay Time ( DD , D , VGS = 4.5 Vdc, RG = 6 Ω) (1) td(off) — 430 860 Fall Time tf — 140 280 Gate Charge (V 24 Vd I 5 0 Ad QT — 34 48 nC (VDS = 24 Vdc, ID = 5.0 Adc, Q1 — 3.5 — ( DS , D , VGS = 10 Vdc) (1) Q2 — 9.5 — Q3 — 6.5 — SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage(1) (IS = 7.5 Adc, VGS = 0 Vdc) (1) (IS = 7.5 Adc, VGS = 0 Vdc, TJ = 125°C) VSD — — 0.83 0.67 1.6 — Vdc Reverse Recovery Time (I 7 5 Adc V 0 Vdc trr — 110 — ns (IS = 7.5 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) (1) ta — 22 — dIS/dt = 100 A/µs) (1) tb — 90 — Reverse Recovery Storage Charge QRR — 0.17 — µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Cpk = Max limit – Typ 3 x SIGMA |
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