MMSF7N03Z

2

Motorola TMOS Power MOSFET Transistor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk

≥ 2.0)

(1) (3)

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

30

—

—

35

—

—

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

0.03

0.15

2.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 15 Vdc, VDS = 0)

IGSS

—

1.3

5.0

µAdc

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(Cpk

≥ 2.0)

(1) (3)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

—

2.0

5.5

3.0

—

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(Cpk

≥ 2.0)

(1) (3)

(VGS = 10 Vdc, ID = 7.5 Adc)

(VGS = 4.5 Vdc, ID = 3.8 Adc)

RDS(on)

—

—

22

30

30

40

m

Ω

Forward Transconductance (VDS = 3.0 Vdc, ID = 3.8 Adc)

(1)

gFS

4.0

9.5

—

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

24 Vdc V

0 Vdc

Ciss

—

750

1500

pF

Output Capacitance

(VDS = 24 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

—

340

680

Transfer Capacitance

f = 1.0 MHz)

Crss

—

45

90

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(V

15 Vd

I

5 0 Ad

td(on)

—

40

80

ns

Rise Time

(VDS = 15 Vdc, ID = 5.0 Adc,

tr

—

90

180

Turn–Off Delay Time

( DS

, D

,

VGS = 10 Vdc, RG = 6 Ω) (1)

td(off)

—

470

940

Fall Time

tf

—

170

340

Turn–On Delay Time

(V

15 Vd

I

5 0 Ad

td(on)

—

120

240

ns

Rise Time

(VDD = 15 Vdc, ID = 5.0 Adc,

tr

—

350

700

Turn–Off Delay Time

( DD

, D

,

VGS = 4.5 Vdc, RG = 6 Ω) (1)

td(off)

—

430

860

Fall Time

tf

—

140

280

Gate Charge

(V

24 Vd

I

5 0 Ad

QT

—

34

48

nC

(VDS = 24 Vdc, ID = 5.0 Adc,

Q1

—

3.5

—

( DS

, D

,

VGS = 10 Vdc) (1)

Q2

—

9.5

—

Q3

—

6.5

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage(1)

(IS = 7.5 Adc, VGS = 0 Vdc) (1)

(IS = 7.5 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

—

—

0.83

0.67

1.6

—

Vdc

Reverse Recovery Time

(I

7 5 Adc V

0 Vdc

trr

—

110

—

ns

(IS = 7.5 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

ta

—

22

—

dIS/dt = 100 A/µs) (1)

tb

—

90

—

Reverse Recovery Storage Charge

QRR

—

0.17

—

µC

(1) Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) Reflects typical values.

Cpk =

Max limit – Typ

3 x SIGMA