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STD10NM60N Datasheet(Hoja de datos) 3 Page - STMicroelectronics

No. de Pieza. STD10NM60N
Descripción  N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical ratings
Doc ID 15764 Rev 5
3/17
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at TC = 25 °C
10
10 (1)
1.
Limited only by maximum temperature allowed.
10
A
ID
Drain current (continuous) at TC = 100 °C
5
5 (1)
5A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
32
32 (1)
32
A
PTOT
Total dissipation at TC = 25 °C
70
25
70
W
dv/dt(3)
3.
ISD ≤10 A, di/dt ≤400 A/µs, VDS peak ≤V(BR)DSS, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
2500
V
TJ
Tstg
Operating junction temperature
Storage temperature
- 55 to 150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
Rthj-case Thermal resistance junction-case max
1.79
5
1.79
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.50
100
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
50
°C/W
TJ
Maximum lead temperature for soldering
purpose
300
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
4A
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAS, VDD=50 V)
200
mJ




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