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STD10NM60N Datasheet(Hoja de datos) 4 Page - STMicroelectronics

No. de Pieza. STD10NM60N
Descripción  N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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Electrical characteristics
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
4/17
Doc ID 15764 Rev 5
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 5.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating, TC=125 °C
1
100
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V; VDS=0
100
nA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 4 A
0.53
0.55
Ω
Table 6.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
-
540
44
1.2
-
pF
pF
pF
Coss eq
(1)
1.
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Equivalent
capacitance time
related
VDS = 0 to 480 V, VGS = 0
-
110
-
pF
Rg
Gate input resistance
f=1 MHz open drain
-
6
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 8 A,
VGS = 10 V
(see Figure 17)
-
19
3
10
-
nC
nC
nC




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