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2SK3018T106 Datasheet(PDF) 2 Page - Rohm |
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2SK3018T106 Datasheet(HTML) 2 Page - Rohm |
2 / 4 page 2SK3018 Transistor Rev.B 2/3 Electrical characteristics (Ta=25 °C) Parameter Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) RDS(on) Ciss |Yfs | Coss Crss Min. − 30 − 0.8 − − 20 − − − − − − 5 13 − 9 4 ±1 − 1 1.5 8 − 713 − − − − µAVGS = ±20V, VDS = 0V ID = 10µA, VGS = 0V VDS = 30V, VGS = 0V VDS = 3V, ID = 100µA ID = 10mA, VGS = 4V ID = 1mA, VGS = 2.5V VDS = 5V VDS = 3V, ID = 10mA VGS = 0V f = 1MHz V µA V Ω Ω pF mS pF pF td(on) − 15 − ID = 10mA, VDD 5V ns tr − 35 − VGS = 5V ns td(off) − 80 − RL = 500Ω ns tf − 80 − RG = 10Ω ns Typ. Max. Unit Conditions Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Static drain-source on-state resistance Electrical characteristic curves 0 1 23 45 0 0.05 0.1 0.15 DRAIN-SOURCE VOLTAGE : VDS (V) 3V 3.5V 2.5V VGS=1.5V 4V 2V Ta=25 °C Pulsed Fig.1 Typical output characteristics 04 0.1m 100m GATE-SOURCE VOLTAGE : VGS (V) 1 10m 3 2 1m 0.2m 0.5m 2m 5m 50m 20m 200m Ta=125 °C 75 °C 25 °C −25 °C VDS =3V Pulsed Fig.2 Typical transfer characteristics −50 0 0 1 1.5 2 CHANNEL TEMPERATURE : Tch ( °C) 0.5 −25 25 50 75 100 125 150 Fig.3 Gate threshold voltage vs. channel temperature VDS =3V ID=0.1mA Pulsed 0.001 1 2 50 DRAIN CURRENT : ID (A) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 Ta=125 °C 75 °C 25 °C −25 °C VGS =4V Pulsed Fig.4 Static drain-source on-state resistance vs. drain current ( Ι ) 0.001 1 2 50 DRAIN CURRENT : ID (A) 0.5 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 20 Ta=125 °C 75 °C 25 °C −25°C VGS =2.5V Pulsed Fig.5 Static drain-source on-state resistance vs. drain current ( ΙΙ) 0 5 10 15 20 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) ID=0.1A Ta=25 °C Pulsed ID=0.05A Fig.6 Static drain-source on-state resistance vs. gate-source voltage |
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