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1N6095R Datasheet(PDF) 1 Page - Naina Semiconductor ltd.

No. de pieza 1N6095R
Descripción Electrónicos  Schottky Power Diode, 25A
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Fabricante Electrónico  NAINA [Naina Semiconductor ltd.]
Página de inicio  http://www.nainasemi.com
Logo NAINA - Naina Semiconductor ltd.

1N6095R Datasheet(HTML) 1 Page - Naina Semiconductor ltd.

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Naina Semiconductor Ltd.
1N6095 thru
1N6096R
1
D-95, Sector 63, Noida – 201301, India
Tel: 0120-4205450
Fax: 0120-4273653
sales@nainasemi.com
www.nainasemi.com
Schottky Power Diode, 25A
Features
Fast Switching
Low forward voltage drop
High surge capability
High efficiency, low power loss
Normal and Reverse polarity
Maximum Ratings (TJ = 25
oC, unless otherwise noted)
Parameter
Test Conditions
Symbol
1N6095(R)
1N6096(R)
Units
Repetitive peak reverse voltage
VRRM
30
40
V
RMS reverse voltage
VRMS
21
28
V
DC blocking voltage
VDC
30
40
V
Continuous forward current
TC ≤ 100
oC
IF
25
25
A
Surge non-repetitive forward
current, half-sine wave
TC = 25
oC
tp = 8.3 ms
IFSM
400
400
A
Forward voltage
IF = 25 A
TJ = 25
oC
VF
0.58
0.58
V
Reverse current
VR = 20V, TJ = 25
oC
IR
2
2
mA
VR = 20V, TJ = 125
oC
250
250
Thermal & Mechanical Specifications (TJ = 25
oC, unless otherwise noted)
Parameters
Symbol
1N6095(R)
1N6096(R)
Units
Maximum thermal resistance, junction to case
Rth(JC)
1.8
oC/W
Operating junction temperature range
TJ
-55 to 150
oC
Storage temperature
Tstg
-55 to 175
oC
Mounting torque (non-lubricated threads)
F
2.0
Nm
Approximate allowable weight
W
5.0
g
DO-203AA (DO-4)


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