2SD1866TV2 datasheet(1/3 Pages) RENESAS

No. de pieza	2SD1866TV2

Descripción Electrónicos	Medium Power Transistor (Motor, Relay drive) (60??0V, 2A)

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Fabricante Electrónico	RENESAS [Renesas Technology Corp]

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c

2012.01 - Rev.C

Medium Power Transistor

(Motor, Relay drive) (60

10V, 2A)

2SD2143

Features

 Dimensions (Unit : mm)

1) Built-in zener diode between collector and base.

2) Strong protection against reverse surges due to "L"

loads.

3) Built-in resistor between base and emitter.

4) Built-in damper diode.

Absolute maximum ratings (Ta=25

C)

∗1 Single pulse Pw=100ms

Junction temperature

Collector power dissipation

Parameter

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

60

±10

60

±10

6

2

10

∗1

150

−55 to +150

Unit

V

A (DC)

3

A (Pulse)

1

W

W (Tc

=25°C)

°C

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Storage temperature

Packaging specifications and hFE

Type

2SD2143

CPT3

1k to 10k

TL

2500

−

Basic ordering unit (pieces)

Package

hFE

Code

Marking

Inner circuit

R2

R1

E :

B :

C :

C

B

E

Emitter

Base

Collector

R1

3.5k

Ω

R2

300

Ω

Electrical characteristics (Ta=25

C)

∗ Measured using pulse current.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Output capacitance

Transition frequency

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

BVCBO

BVCEO

ICBO

IEBO

VCE(sat)

hFE

Cob

50

−

1000

−

−−

−

25

80

70

1.0

3

1.5

10000

−

V

μA

mA

V

∗

−

pF

IC

=50μA

IC

=5mA

VCB

=40V

VEB

=5V

IC/IB

=1A/1mA

VCE

=2V, IC=1A

VCE

=5V, IE= −0.1A, f=30MHz

VCB

=10V, IE=0A, f=1MHz

fT

MHz

(3) Emitter(Source)

(2) Collector(Drain)

(1) Base(Gate)

ROHM : CPT3

EIAJ : SC-63

9.5

2.5

0.8Min.

1.5

C0.5

0.9

1.5

5.5

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2SD1866TV2 Datasheet(PDF) 1 Page - Renesas Technology Corp

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