BD176 datasheet(1/4 Pages) FAIRCHILD

No. de pieza	BD176

Descripción Electrónicos	Medium Power Linear and Switching Applications

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Fabricante Electrónico	FAIRCHILD [Fairchild Semiconductor]

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Rev. B1, October 2002

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings T

C=25°C unless otherwise noted

Electrical Characteristics T

C=25°C unless otherwise noted

* Pulse Test: PW=300

µs, duty Cycle=1.5% Pulsed

hFE Classificntion

* Classification 16: Only BD 176

Symbol

Parameter

Value

Units

VCBO

*Collector-Base Voltage

: BD176

: BD178

: BD180

- 45

- 60

- 80

V

VCEO

Collector-Emitter Voltage

: BD176

: BD178

: BD180

- 45

- 60

- 80

V

VEBO

Emitter-Base Voltage

- 5

V

IC

Collector Current (DC)

- 3

A

IC

*Collector Current (Pulse)

- 7

A

PC

Collector Dissipation (TC=25°C)

30

W

Rθja

Junction to Ambient

70

°C/W

Rθjc

Junction to Case

8.5

°C/W

TJ

Junction Temperature

150

°C

TSTG

Storage Temperature

- 65 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

VCEO(sus)

* Collector-Emitter Sustaining Voltage

: BD176

: BD178

: BD180

IC = - 100mA, IB = 0

- 45

- 60

- 80

V

ICBO

Collector Cut-off Current : BD176

: BD178

: BD180

VCB = - 45V, IE = 0

VCB = - 60V, IE = 0

VCB = - 80V, IE = 0

- 100

µA

IEBO

Emitter Cut-off Current

VEB = - 5V, IC = 0

- 1

mA

hFE1

hFE2

* DC Current Gain

VCE = - 2V, IC = - 150mA

VCE = - 2V, IC = - 1A

40

15

250

VCE(sat)

* Collector-Emitter Saturation Voltage

IC = -1 A , IB = - 0.1A

- 0.8

V

VBE(on)

* Base-Emitter On Voltage

VCE = - 2V, IC = -1 A

- 1.3

V

fT

Current Gain Bandwidth Product

VCE = -10V, IC = - 250mA

3

MHz

Classification

6

10

16

hFE1

40 ~ 100

63 ~ 160

100 ~ 250

BD176/178/180

Medium Power Linear and Switching

Applications

• Complement to BD 175/177/179 respectively

1

TO-126

1. Emitter

2.Collector

3.Base

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