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BSR17A Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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BSR17A Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 µA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC = 1.0 mA, IE = 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V ICBO Collector-Cutoff Current VCB = 30 V, TA = 150 °C 5.0 µA ICEX Collector-Cutoff Current VCE = 30 V, VEB = 3.0 V 50 nA IBEX Reverse Base Current VCE = 30 V, VEB = 3.0 V 50 nA ON CHARACTERISTICS hFE DC Current Gain IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V 40 70 100 60 30 300 VCE(sat) Collector-Emitter Saturation Voltage* IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.2 0.3 V V VBE(sat) Base-Emitter Saturation Voltage* IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.65 0.85 0.95 V V SMALL SIGNAL CHARACTERISTICS fT Transition Frequency IC = 20 mA, VCE = 20 V, f = 100 MHz 300 MHz Ccb Collector-Base Capacitance VCB = 5.0 V, IE = 0, f = 1.0 MHz 4.0 pF Ceb Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 1.0 MHz 8.0 pF hie Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 10 k Ω hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 100 400 hoe Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 1.0 40 µS SWITCHING CHARACTERISTICS td Delay Time IC = 10 mA, IB1 = 1.0 mA, VEB = 0.5 V 35 ns tr Rise Time 35 ns ts Storage Time IC = 10 mA, IBon = IBoff = 1.0 mA 200 ns tf Fall Time 50 ns *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0 % Spice Model NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p Itf=.4 Vtf=4 Xtf=2 Rb=10) NPN General Purpose Amplifier (continued) |
Número de pieza similar - BSR17A |
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Descripción similar - BSR17A |
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