LMSD1819A-RT1G datasheet(2/4 Pages) LRC

No. de pieza	LMSD1819A-RT1G

Descripción Electrónicos	General Purpose Amplifier Transistor NPN Silicon Surface Mount

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Fabricante Electrónico	LRC [Leshan Radio Company]

Página de inicio	http://www.lrc.cn/

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ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Min

Max

Unit

Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)

V(BR)CEO

50

−

Vdc

Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0)

V(BR)CBO

60

−

Vdc

Emitter-Base Breakdown Voltage (IE = 10 mAdc, IE = 0)

V(BR)EBO

7.0

−

Vdc

Collector-Base Cutoff Current (VCB = 20 Vdc, IE = 0)

ICBO

−

0.1

mA

Collector-Emitter Cutoff Current (VCE = 10 Vdc, IB = 0)

ICEO

−

0.1

mA

DC Current Gain (Note 2)

(VCE = 10 Vdc, IC = 2.0 mAdc)

(VCE = 2.0 Vdc, IC = 100 mAdc)

hFE1

hFE2

210

90

340

−

Collector-Emitter Saturation Voltage (Note 2)

(IC = 100 mAdc, IB = 10 mAdc)

VCE(sat)

−

0.5

Vdc

2. Pulse Test: Pulse Width

≤ 300 ms, D.C. ≤ 2%.

Figure 1. Derating Curve

250

200

150

100

50

0

−50

0

50

100

150

TA, AMBIENT TEMPERATURE (°C)

Figure 2. IC − VCE

VCE, COLLECTOR VOLTAGE (V)

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 4. Collector Saturation Region

IB, BASE CURRENT (mA)

60

0

50

40

30

20

10

0

24

6

8

TA = 25°C

160 mA

140 mA

120 mA

100 mA

80 mA

60 mA

40 mA

IB = 20 mA

1000

0.1

100

10

1

10

100

TA = 25°C

TA = −25°C

TA = 75°C

VCE = 10 V

2

0.01

1.5

1

0.5

0

0.1

1

10

100

TA = 25°C

RqJA = 833°C/W

LESHAN RADIO COMPANY, LTD.

LMSD1819A-RT1G

Rev.O 2/4

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