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STF34NM60ND Datasheet(PDF) 3 Page - STMicroelectronics

No. de pieza STF34NM60ND
Descripción Electrónicos  N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF34NM60ND Datasheet(HTML) 3 Page - STMicroelectronics

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STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND
Electrical ratings
Doc ID 18099 Rev 5
3/22
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
D2PAK, TO-220, TO-247
TO-220FP
VDS
Drain-source voltage
600
V
VGS
Gate- source voltage
± 25
V
ID
Drain current (continuous) at
TC = 25 °C
29
29(1)
1.
Current limited by package
A
ID
Drain current (continuous) at
TC = 100 °C
18
18(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
116
116(1)
A
PTOT
Total dissipation at TC = 25 °C
190
40
W
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;TC=25 °C)
2500
V
dv/dt(3)
3.
ISD ≤ 29 A, di/dt ≤ 600 A/µs, VDD = 80% V(BR)DSS,VDSPeak < V(BR)DSS
Peak diode recovery voltage slope
40
V/ns
Tstg
Storage temperature
- 55 to 150
°C
TJ
Max. operating junction temperature
150
Table 3.
Thermal data
Symbol
Parameter
TO-220 TO-247 D2PAK
TO-220FP
Unit
Rthj-case Thermal resistance junction-case max
0.66
3.1
°C/W
Rthj-amb
Thermal resistance junction-ambient
max
62.5
50
62.5
°C/W
Rthj-pcb
(1)
1.
When mounted on FR-4 board of 1 inch², 2 oz Cu.
Thermal resistance junction-pcb max
30
°C/W
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by TJ max)
7A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
345
mJ


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