IRF840S datasheet(3/4 Pages) A-POWER

No. de pieza	IRF840S

Descripción Electrónicos	N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Fabricante Electrónico	A-POWER [Advanced Power Electronics Corp.]

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IRF840S

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Normalized BVDSS v.s. Junction

Fig 4. Normalized On-Resistance

Temperature

v.s. Junction Temperature

Fig 5. Forward Characteristic of

Fig 6. Gate Threshold Voltage v.s.

Reverse Diode

Junction Temperature

3

0.8

0.9

1

1.1

1.2

-50

0

50

100

150

T j , Junction Temperature (

o C)

0

4

8

12

16

0

4

8

12

16

20

24

V DS , Drain-to-Source Voltage (V)

T C =25

o C

10V

7.0V

6.0V

5.0V

V G =4.5V

0

1

2

3

-50

0

50

100

150

T j , Junction Temperature (

o C )

I D =4.8A

V G =10V

0

2

4

6

8

0

4

8

12

16

20

24

V DS , Drain-to-Source Voltage (V)

T C =150

o C

10V

7 .0V

6 .0V

5.0 V

V G =4. 5 V

0

2

4

6

8

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

V SD , Source-to-Drain Voltage (V)

T j = 150

o CT

j = 25

o C

0.4

0.6

0.8

1

1.2

1.4

-50

0

50

100

150

T j , Junction Temperature (

o C)

Número de pieza similar - IRF840S

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IRF840S Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

IRF840S Datasheet(HTML) 3 Page - Advanced Power Electronics Corp.

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