FDD86102LZ datasheet(4/6 Pages) DIODES

No. de pieza	FDD86102LZ

Descripción Electrónicos	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓

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Fabricante Electrónico	DIODES [Diodes Incorporated]

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FDD86102LZ Rev.C1

www.fairchildsemi.com

4

Figure 7.

0

5

10

15

20

0

2

4

6

8

10

ID = 8 A

VDD = 50 V

VDD = 25 V

Qg, GATE CHARGE (nC)

VDD = 75 V

Gate Charge Characteristics

Figure8.

0.1

1

10

100

1

10

100

1000

2000

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

CapacitancevsDrain

to Source Voltage

Figure9.

0.001

0.01

0.1

1

10

30

1

10

40

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10.

0

5

10

15

20

25

30

35

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

VGS = 0 V

TJ = 125 oC

TJ = 25 oC

V

GS, GATE TO SOURCE VOLTAGE (V)

Gate Leakage Current vs Gate to

Source Voltage

Figure 11.

25

50

75

100

125

150

0

10

20

30

40

VGS = 4.5 V

RθJC = 2.3

oC/W

VGS = 10 V

T

C, CASE TEMPERATURE (

oC)

Maximum Continuous Drain

Current vs Case Temperature

Figure 12.

0.1

1

10

100

300

0.05

0.1

1

10

100

100us

10 ms

DC

1 ms

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

RθJC = 2.3

oC/W

TC = 25

oC

Forward BiasSafe

Operating Area

Typical Characteristics T

J = 25 °C unless otherwise noted

Número de pieza similar - FDD86102LZ

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Inchange Semiconductor ...	FDD86102LZ	282Kb / 2P	isc N-Channel MOSFET Transistor
VBsemi Electronics Co.,...	FDD86102LZ	960Kb / 8P	N-Channel 100-V (D-S) MOSFET
Fairchild Semiconductor	FDD86102LZ	372Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
BYCHIP ELECTRONICS CO.,...	FDD86102LZ	690Kb / 4P	N-channel Enhancement Mode Power MOSFET
Fairchild Semiconductor	FDD86102LZ	372Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓

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Descripción similar - FDD86102LZ

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Fairchild Semiconductor	FDD86102LZ	372Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 35 A, 22.5 m廓
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ON Semiconductor	FDP085N10A	3Mb / 10P	N-Channel PowerTrench짰 MOSFET 100 V, 96 A, 8.5 m廓 November-2017, Rev. 3
Fairchild Semiconductor	FDS86140	255Kb / 6P	N-Channel PowerTrench짰 MOSFET 100 V, 11.2 A, 9.8 m廓
	FDMS86150	324Kb / 7P	N-Channel PowerTrench짰 MOSFET 100 V, 60 A, 4.85 m廓
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	FDPF3860TYDTU	589Kb / 8P	N-Channel PowerTrench짰 MOSFET 100 V, 20 A, 38.2 m廓
	FDMS86103L	279Kb / 7P	N-Channel PowerTrench짰 MOSFET 100 V, 49 A, 8 m廓
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