AM4530C datasheet(1/8 Pages) ANALOGPOWER

No. de pieza	AM4530C

Descripción Electrónicos	P & N-Channel 32-V (D-S) MOSFET

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Fabricante Electrónico	ANALOGPOWER [Analog Power]

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AM4530C

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM4530_I

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

r

DS(on) and to ensure minimal power loss and heat

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

VDS (V)

rDS(on) m(Ω)ID (A)

82 @ VGS = 4.5V

4.2

50 @ VGS = 10V

5.3

80 @ VGS = -4.5V

-4.2

52 @ VGS = -10V

-5.2

30

PRODUCT SUMMARY

-30

P & N-Channel 32-V (D-S) MOSFET

•Low r

DS(on) provides higher efficiency and

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

3

4

7

8

5

6

Symbol N-Channel P-Channel Units

VDS

30

-30

VGS

±20

TA=25

oC

5.3

-5.2

TA=70

oC4.2

-4.1

IDM

20

-20

IS

1.3

-1.3

A

TA=25

oC

2.1

TA=70

oC1.3

1.3

TJ, Tstg

oC

Continuous Source Current (Diode Conduction)

a

ABSOLUTE MAXIMUM RATINGS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

ID

A

Power Dissipation

a

PD

Operating Junction and Storage Temperature Range

W

-55 to 150

Symbol

Maximum Units

t <= 10 sec

62.5

oC/W

Steady-State

110

oC/W

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

RθJA

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AM4530C Datasheet(PDF) 1 Page - Analog Power

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Número de pieza similar - AM4530C

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