FDC6327C, Rev. E

FDC6327C

General Description

These N & P-Channel 2.5V specified MOSFETs are

produced using Fairchild Semiconductor's advanced

PowerTrench process that has been especially tailored

to minimize on-state resistance and yet maintain low gate

charge for superior switching performance.

These devices have been designed to offer exceptional power

dissipation in a very small footprint for applications where

the bigger more expensive SO-8 and TSSOP-8 packages

are impractical.

Applications

July 2000

Features

DS(on)

= 0.08

Ω @ V

GS

= 4.5V

R

DS(on)

= 0.12

Ω @ V

GS

= 2.5V

DS(on)

= 0.17

Ω @ V

GS

= -4.5V

R

DS(on)

= 0.25

Ω @ V

GS

= -2.5V

low R

than SO-8); low profile (1mm thick).

1999 Fairchild Semiconductor Corporation

Symbol

Parameter

N-Channel

P-Channel

Units

Drain-Source Voltage

20

-20

V

Gate-Source Voltage

±8

±8V

Drain Current

- Continuous

(Note 1a)

2.7

-1.9

A

- Pulsed

8

-8

Power Dissipation

(Note 1a)

0.96

W

(Note 1b)

0.9

(Note 1c)

0.7

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

130

°C/W

Thermal Resistance, Junction-to-Case

(Note 1)

60

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

.327

FDC6327C

7”

8mm

3000

D1

S2

G1

D2

S1

G2

SuperSOT

-6

TM

1

5

6

3

2

4