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FDC642P Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDC642P Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  FDC642P, Rev. B Electrical Characteristics T A = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C -16 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.7 -1.5 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = -250 µA, Referenced to 25°C 2.5 mV/ °C RDS(on) Static Drain-Source On-Resistance VGS = -4.5 V, ID = -4 A VGS = -4.5 V, ID = -4 A, TJ=125 °C VGS = -2.5 V, ID = -3.2 A 0.054 0.076 0.077 0.065 0.105 0.100 Ω ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5 V -10 A gFS Forward Transconductance VDS = -5 V, ID = -4 A 9 S Dynamic Characteristics Ciss Input Capacitance 640 pF Coss Output Capacitance 180 pF Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V f = 1.0 MHz 90 pF Switching Characteristics (Note 2) td(on) Turn-On Delay Time 11 20 ns tr Turn-On Rise Time 19 30 ns td(off) Turn-Off Delay Time 26 42 ns tf Turn-Off Fall Time VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 Ω 35 55 ns Qg Total Gate Charge 7.2 10 nC Qgs Gate-Source Charge 1.7 nC Qgd Gate-Drain Charge VDS = -10 V, ID = -4 A VGS = -4.5 V, 1.6 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -1.3 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -1.3 A (Note 2) -0.75 -1.2 V Notes: 1. RθJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJCis guaranteed by design while RθCAis determined by the user's board design. 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% a) 78° C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156° C/W when mounted on a minimum pad of 2 oz.copper. |
Número de pieza similar - FDC642P |
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Descripción similar - FDC642P |
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