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STP24NM60N Datasheet(PDF) 1 Page - STMicroelectronics |
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STP24NM60N Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 19 page August 2011 Doc ID 18047 Rev 3 1/19 19 STF24NM60N, STI24NM60N STP24NM60N, STW24NM60N N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II Power MOSFET TO-220FP, I2PAK, TO-220 and TO-247 Features ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Order codes VDSS (@Tjmax) RDS(on) max. ID STF24NM60N 650 V < 0.19 Ω 17 A STI24NM60N 650 V < 0.19 Ω 17 A STP24NM60N 650 V < 0.19 Ω 17 A STW24NM60N 650 V < 0.19 Ω 17 A 1 2 3 1 2 3 TO-220FP TO-220 TO-247 1 2 3 1 2 3 TAB I2PAK Table 1. Device summary Order codes Marking Package Packaging STF24NM60N 24NM60N TO-220FP Tube STI24NM60N I2PAK STP24NM60N TO-220 STW24NM60N TO-247 www.st.com |
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