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FDG6301N Datasheet(Hoja de datos) 1 Page - Fairchild Semiconductor

No. de Pieza. FDG6301N
Descripción  Dual N-Channel, Digital FET
Descarga  8 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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July 1999
FDG6301N
Dual N-Channel, Digital FET
General Description
Features
*The pinouts are symmetrical; pin 1 and 4 are interchangeable.
Units inside the carrier can be of either orientation and will not affect the functionality of the device.
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Symbol
Parameter
FDG6301N
Units
V
DSS
Drain-Source Voltage
25
V
V
GSS
Gate-Source Voltage
8
V
I
D
Drain/Output Current
- Continuous
0.22
A
- Pulsed
0.65
P
D
Maximum Power Dissipation
(Note 1)
0.3
W
T
J,TSTG
Operating and Storage Temperature Range
-55 to 150
°C
ESD
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model(100 pF / 1500
)
6.0
kV
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
415
°C/W
FDG6301N Rev.E
1
25 V, 0.22 A continuous, 0.65 A peak.
R
DS(ON) = 4 @ VGS= 4.5 V,
R
DS(ON) = 5 @ VGS= 2.7 V.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V
GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
Compact industry standard SC70-6 surface mount
package.
These dual N-Channel logic level enhancement mode
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance. This device has been
designed especially for low voltage applications as a
replacement for bipolar digital transistors and small
signal MOSFETs.
SOT-23
SuperSOTTM-8
SO-8
SOT-223
SC70-6
SuperSOTTM-6
1 or 4
*
6 or 3
5 or 2
4 or 1
*
2 or 5
3 or 6
SC70-6
G1
D2
S1
D1
S2
G2
.01




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