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FDG6320C Datasheet(Hoja de datos) 4 Page - Fairchild Semiconductor

No. de Pieza. FDG6320C
Descripción  Dual N & P Channel Digital FET
Descarga  12 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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 4 page
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FDG6320C.Rev D
Typical Electrical Characteristics: N-Channel
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 3. On-Resistance Variation
with Temperature.
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1
1.2
1.4
1.6
1.8
T , JUNCTION TEMPERATURE (°C)
J
V
= 4.5V
GS
I = 0.22A
D
0
1
2
3
4
5
0
0.1
0.2
0.3
0.4
0.5
V
, DRAIN-SOURCE VOLTAGE (V)
V
=4.5V
GS
DS
2.5V
3.0V
2.0V
3.5V
2.7V
0
0.1
0.2
0.3
0.4
2
2.5
3
3.5
4
4.5
5
I
, DRAIN CURRENT (A)
V
= 2.5V
GS
D
5.0V
4.5V
2.7V
4.0V
3.5V
3.0V
1
2
3
4
5
0
4
8
12
16
20
V
,GATE TO SOURCE VOLTAGE (V)
GS
25°C
I = 0.10A
D
T =125°C
A
0.5
1
1.5
2
2.5
3
0
0.05
0.1
0.15
0.2
V
, GATE TO SOURCE VOLTAGE (V)
V
= 5V
DS
GS
T = -55°C
J
125°C
25°C
0
0.2
0.4
0.6
0.8
1
1.2
0.0001
0.001
0.01
0.1
0.4
V
, BODY DIODE FORWARD VOLTAGE (V)
25°C
-55°C
V
= 0V
GS
SD
T = 125°C
J
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.




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