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FDN335N Datasheet(Hoja de datos) 4 Page - Fairchild Semiconductor

No. de Pieza. FDN335N
Descripción  N-Channel 2.5V Specified PowerTrenchTM MOSFET
Descarga  8 Pages
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Fabricante  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
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FDN335N Rev. C
Typical Characteristics (continued)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient themal response will change depending on the circuit board design.
0.0001
0.001
0.01
0.1
1
10
100
300
0.001
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
t , TIME (sec)
R
(t) = r(t) * R
R
= 270 °C/W
Duty Cycle, D = t /t
1
2
θJA
θJA
θJA
T - T
= P * R
(t)
θJA
A
J
P(pk)
t1
t 2
1
Single Pulse
D = 0.5
0.1
0.05
0.02
0.01
0.2
0
4
8
12
16
20
0.0001
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
SINGLE PULSE
RθJA=270
o
C/W
TA=25
o
C
0.01
0.1
1
10
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
DC
10s
1s
100ms
10ms
1ms
VGS = 4.5V
SINGLE PULSE
RθJA = 270
oC/W
TA = 25
oC
RDS(ON) LIMIT
0
1
2
3
4
5
00.5
11.5
22.5
33.5
4
Qg, GATE CHARGE (nC)
ID = 1.7A
VDS = 5V
10V
15V
0
100
200
300
400
500
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
CISS
CRSS
COSS
f = 1MHz
VGS = 0 V
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.




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