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FDS3690 Datasheet(PDF) 1 Page - Fairchild Semiconductor

No. de pieza FDS3690
Descripción Electrónicos  100V N-Channel PowerTrench MOSFET
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS3690 Datasheet(HTML) 1 Page - Fairchild Semiconductor

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February 2000
PRELIMINARY
1999 Fairchild Semiconductor Corporation
FDS3690 Rev B(W)
FDS3690
100V N-Channel PowerTrench
MOSFET
General Description
This
N-Channel
MOSFET
has
been
designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
DS(ON) specifications.
The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
Applications
• DC/DC converter
• Motor Driver
Features
• 5 A, 100 V.
RDS(ON) = 0.059
Ω @ V
GS = 10 V
RDS(ON) = 0.066
Ω @ V
GS = 6 V
• Fast switching speed.
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability.
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
– Continuous
(Note 1a)
5A
– Pulsed
40
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
PD
(Note 1c)
1.0
W
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS3690
FDS3690
13’’
12mm
2500 units


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