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ADG419BRMZ-REEL1 Datasheet(PDF) 3 Page - Analog Devices |
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ADG419BRMZ-REEL1 Datasheet(HTML) 3 Page - Analog Devices |
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3 / 16 page  ADG419 Rev. B | Page 3 of 16 SPECIFICATIONS DUAL SUPPLY VDD = 15 V ± 10%, VSS = −15 V ± 10%, VL = 5 V ± 10%, GND = 0 V, unless otherwise noted. Table 1. B Version T Version Parameter1 +25°C −40°C to +85°C −40°C to +125°C +25°C −55°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range VSS to VDD VSS to VDD RON 25 25 Ω typ VD = ±12.5 V, IS = −10 mA 35 45 45 35 45 Ω max VDD = +13.5 V, VSS = −13.5 V LEAKAGE CURRENTS VDD = +16.5 V, VSS = −16.5 V Source Off Leakage, IS (Off ) ±0.1 ±0.1 nA typ VD = ±15.5 V, VS = ∓15.5 V; see Figure 12 ±0.25 ±5 ±15 ±0.25 ±15 nA max Drain Off Leakage, ID (Off ) ±0.1 ±0.1 nA typ VD = ±15.5 V, VS = ∓15.5 V; see Figure 12 ±0.75 ±5 ±30 ±0.75 ±30 nA max Channel On Leakage, ID, IS (On) ±0.4 ±0.4 nA typ VS = VD = ±15.5 V; see Figure 13 ±0.75 ±5 ±30 ±0.75 ±30 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 0.8 V max Input Current IINL or IINH ±0.005 ±0.005 ±0.005 μA typ VIN = VINL or VINH ±0.5 ±0.5 ±0.5 μA max DYNAMIC CHARACTERISTICS2 tTRANSITION 160 200 200 145 200 ns max RL = 300 Ω, CL = 35 pF; VS1 = ±10 V, VS2 = ∓10 V; see Figure 14 Break-Before-Make Time Delay, tD 30 30 ns typ RL = 300 Ω, CL = 35 pF; VS1 = VS2 = ±10 V; see Figure 15 5 5 ns min Off Isolation 80 80 dB typ RL = 50 Ω, f = 1 MHz; see Figure 16 Channel-to-Channel Crosstalk 90 70 dB typ RL = 50 Ω, f = 1 MHz; see Figure 17 CS (Off ) 6 6 pF typ f = 1 MHz CD, CS (On) 55 55 pF typ f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 0.0001 0.0001 μA typ VIN = 0 V or 5 V 1 2.5 2.5 1 2.5 μA max ISS 0.0001 0.0001 μA typ 1 2.5 2.5 1 2.5 μA max IL 0.0001 0.0001 μA typ VL = 5.5 V 1 2.5 2.5 1 2.5 μA max 1 Temperature ranges are as follows: B Version: −40°C to +125°C; T Version: −55°C to +125°C. 2 Guaranteed by design, not subject to production test. |
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