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BA12003BF Datasheet(PDF) 2 Page - Rohm

No. de pieza BA12003BF
Descripción Electrónicos  High voltage, high current Darlington transistor array
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Fabricante Electrónico  ROHM [Rohm]
Página de inicio  http://www.rohm.com
Logo ROHM - Rohm

BA12003BF Datasheet(HTML) 2 Page - Rohm

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BA12001B / BA12003B / BA12003BF / BA12004B
Standard ICs
!
!
!
!
Internal circuit configuration
IN
COM
OUT
GND
3k
7.2k
Fig.1 BA12001B
IN
COM
OUT
GND
3k
7.2k
2.7k
Fig.2 BA12003B / BF
IN
COM
OUT
GND
3k
7.2k
10.5k
Fig.3 BA12004B
!
!
!
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Limits
Unit
VCE
60
V
Input voltage
Input current
VIN
−0.5∼+30
V
other than BA12001B
BA12001B
DIP package
SOP package
IIN
25
Output current
IOUT
500
Ground pin current
IGND
2.31
A
Power dissipation
Pd
12502
6253
mW
Diode reverse voltage
VR
60
V
Diode forward current
IF
500
mA
Operating temperature
Topr
−25∼+75
˚C
Storage temperature
Tstg
−55∼+150
˚C
mA / unit
mA / unit
Power supply voltage
1 Pulse width ≤ 20ms, duty cycle ≤ 10%, same current for all 7 circuits
2 Reduced by 10mW for each increase in Ta of 1˚C over 25˚C .
3 Reduced by 50mW for each increase in Ta of 1˚C over 25˚C .
!
!
!
!
Recommended operating conditions (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Output current
IOUT
−−
350
mA
Fig.9, 10
Power supply voltage
VCE
−−
55
V
Input voltage (excluding BA12001B)
VIN
−−
30
V
Input current (BA12001B only)
IIN
−−
25
mA / unit


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