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2SC4226 Datasheet(PDF) 2 Page - Renesas Technology Corp |
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2SC4226 Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 8 page 2SC4226 R09DS0022EJ0200 Rev.2.00 Page 2 of 6 Jun 29, 2011 ELECTRICAL CHARACTERISTICS (TA = +25 °C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 − − 1.0 μA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 − − 1.0 μA DC Current Gain hFE Note 1 VCE = 3 V, IC = 7 mA 40 110 250 – RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA 3.0 4.5 – GHz Insertion Power Gain ⏐S21e⏐2 VCE = 3 V, IC = 7 mA, f = 1 GHz 7 9 – dB Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz − 1.2 2.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0, f = 1 MHz − 0.7 1.5 pF Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank R23/Y23 R24/Y24 R25/Y25 Marking R23 R24 R25 hFE Value 40 to 80 70 to 140 125 to 250 <R> |
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