LM185-1.2-N, LM285-1.2-N, LM385-1.2-N

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SNVS742E – JANUARY 2000 – REVISED APRIL 2013

ELECTRICAL CHARACTERISTICS

(1)

LM185-1.2-N

LM185BX-1.2-N

LM385B-1.2-N

LM185BY-1.2-N

LM385BX-1.2-N

LM385-1.2-N

LM285-1.2-N

LM385BY-1.2-N

Units

Parameter

Conditions

Typ

LM285BX-1.2-N

(Limit)

LM285BY-1.2-N

Tested

Design

Tested

Design

Tested

Design

(3)

Reverse Breakdown

1.23

1.223

1.223

1.205

V(Min)

5

Voltage

10

1.247

1.247

1.260

V(Max)

Minimum Operating

8

10

20

15

20

15

20

μA

Current

LM385M3-1.2-N

10

15

(Max)

Reverse Breakdown

10

1

1.5

1

1.5

1

1.5

mV

Voltage Change with

(Max)

Current

1mA

10

20

20

25

20

25

mV

(Max)

Reverse Dynamic

1

Ω

Impedance

Wideband Noise

60

μV

(rms)

10Hz

≤ f ≤ 10kHz

Long Term Stability

20

ppm

Average Temperature

X Suffix

30

30

ppm/°C

Y Suffix

50

50

ppm/°C

All Others

150

150

150

ppm/°C

(Max)

(1)

(2)

Production tested.

(3)

A military RETS electrical specification is available on request.

(4)

Specified by design. Not production tested. These limits are not used to calculate average outgoing quality levels.

(5)

The average temperature coefficient is defined as the maximum deviation of reference voltage at all measured temperatures between

THERMAL CHARACTERISTICS

Thermal Resistance

TO-92

TO

SOIC

SOT-23

180°C/W (0.4

″ leads)

440°C/W

165°C/W

283°C/W

170°C/W (0.125

″ leads)

N/A

80°C/W

N/A

N/A

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