©2009 Fairchild Semiconductor Corporation

FCP7N60N / FCPF7N60NT Rev. C0

www.fairchildsemi.com

1

March 2013

FCP7N60N / FCPF7N60NT

600 V, 6.8 A, 520 m

Ω

Features

• 100% Avalanche Tested

• RoHS Compliant

Application

• LCD/LED TV and Monitor

• Lighting

• Solar Inverter

• AC-DC Power Supply

Description

generation of high voltage super-junction (SJ) technology

employing a deep trench filling process that differentiates it from

the conventional SJ MOSFETs. This advanced technology and

precise process control provides lowest Rsp on-resistance,

superior switching performance and ruggedness. SupreMOS

MOSFET is suitable for high frequency switching power converter

applications such as PFC, server/telecom power, FPD TV power,

ATX power and industrial power applications.

D

G

S

TO-220F

G

S

D

TO-220

G D S

Thermal Characteristics

Symbol

Parameter

FCP7N60N

FCPF7N60NT

Unit

Drain to Source Voltage

600

V

Gate to Source Voltage

±30

V

Drain Current

6.8

6.8*

A

4.3

4.3*

Drain Current

- Pulsed

(Note 1)

20.4

20.4

A

Single Pulsed Avalanche Energy

(Note 2)

79.4

mJ

Avalanche Current

6.8

A

Repetitive Avalanche Energy

0.6

mJ

dv/dt

MOSFET dv/dt Ruggedness

100

V/ns

Peak Diode Recovery dv/dt

(Note 3)

4.9

V/ns

Power Dissipation

64.1

30.5

W

0.51

0.24

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Symbol

Parameter

FCP7N60N

FCPF7N60NT

Unit

Thermal Resistance, Junction to Case

1.95

4.1

Thermal Resistance, Case to Heak Sink ( Typical)

0.5

0.5

Thermal Resistance, Junction to Ambient

62.5

62.5

*Drain current limited by maximum junction temperature