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STD12N65M5 Datasheet(Hoja de datos) 3 Page - STMicroelectronics

No. de Pieza. STD12N65M5
Descripción  N-channel 650 V, 0.39 Ohm, 8.5 A MDmesh V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STD/F/I/P/U12N65M5
Electrical ratings
Doc ID 15428 Rev 5
3/23
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, IPAK,
DPAK, I²PAK
TO-220FP
VDS
Drain-source voltage (VGS = 0)
650
V
VGS
Gate-source voltage
25
V
ID
Drain current (continuous) at TC = 25 °C
8.5
8.5 (1)
1.
Limited only by maximum temperature allowed.
A
ID
Drain current (continuous) at TC = 100 °C
5.4
5.4 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
34
34 (1)
A
PTOT
Total dissipation at TC = 25 °C
70
25
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
2.5
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
150
mJ
dv/dt (3)
3.
ISD ≤ 8.5 A, di/dt ≤400 A/µs; VPeak < V(BR)DSS, VDD = 400 V
Peak diode recovery voltage slope
15
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
- 55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
DPAK
IPAK
I²PAK TO-220 TO-220FP
Rthj-case
Thermal resistance junction-case
max
1.79
5
°C/W
Rthj-amb
Thermal resistance junction-
ambient max
100
62.5
°C/W
Rthj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb
max
50
°C/W
Tl
Maximum lead temperature for
soldering purpose
300
°C




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