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STE140NF20D Datasheet(Hoja de datos) 4 Page - STMicroelectronics

No. de Pieza. STE140NF20D
Descripción  N-channel 200 V, 10 mOmh typ., 140 A STripFET II Power MOSFET (with fast diode) in an ISOTOP package
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Fabricante  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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Electrical characteristics
STE140NF20D
4/13
Doc ID 15299 Rev 4
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 1 mA, VGS= 0
200
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = 200 V,
VDS = 200 V, TC = 125 °C
10
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20 V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on
resistance
VGS= 10 V, ID= 70 A
10
12
m
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f=1 MHz,
VGS=0
-
11100
2190
334
-
pF
pF
pF
Co(tr)
(1)
1.
Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
Equivalent capacitance time
related
VDS = 0 to 160 V, VGS = 0,
-
1525
-
pF
Co(er)
(2)
2.
Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
Equivalent capacitance
energy related
-
1139
-
pF
Rg
Intrinsic gate resistance
f = 1 MHz open drain
-
1.4
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 160 V, ID = 140 A,
VGS= 10 V
(see Figure 16)
-
338
47
183
-
nC
nC
nC




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