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FMBS549 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FMBS549 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 6 page V 1 Ic = 1 A, Vce = 2 V Base-Emitter On Voltage VBE(on) V 1.25 Ic = 1 A, Ib = 100 mA Base-Emitter Saturation Voltage VBE(sat) mV mV mV mV 200 350 500 750 Ic = 250 mA, Ib = 25 mA Ic = 500 mA, Ib = 50 mA Ic = 1 A, Ib = 100 mA Ic = 2 A, Ib = 200 mA Collector-Emitter Saturation Voltage VCE(sat) - 300 70 100 80 40 100 Vce = 2V, Ic = 50 mA Vce = 2V, Ic = 500 mA Vce = 2V, Ic = 1 A Vce = 2V, Ic = 2 A Vce = 0.8V, Ic = 500 m A DC Current Gain hFE ON CHARACTERISTICS nA 100 Veb = 4 V Emitter Cutoff Current IEBO nA uA 100 10 Vcb = 30 V Vcb = 30 V, Ta= 100C Collector Cutoff Current ICBO V 5 Ie = 100 uA Emitter to Base Voltage BVEBO V 35 Ic = 100 uA Collector to Base Voltage BVCBO V 30 Ic = 10 mA Collector to Emitter Voltage BVCEO OFF CHARACTERISTICS Units Max Min Test Conditions Parameter Symbol Electrical Characteristics T A = 25°C unless otherwise noted PNP Low Saturation transistor (continued) SMALL SIGNAL CHARACTERISTICS MHz 100 Vce = 5 V, Ic = 100mA, f = 100MHz Current Gain - Bandwidth Product fT pF 25 Vcb = 10V, f = 1MHz Output Capacitance Cobo © 1999 Fairchild Semiconductor fmbs549.lwp Rev A PrPB |
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